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 Bulletin I2202 rev. A 03/06
SAFEIR Series 80EPS..PbF
INPUT RECTIFIER DIODE
Lead-Free ("PbF" suffix)
VF
< 1.17V @ 80A
IFSM = 1450A VRRM = 800 -1200V
Major Ratings and Characteristics Characteristics
IF(AV) Sinusoidal waveform VRRM range IFSM VF TJ @ 80A, TJ = 25C
Description/ Features Units
A V A V C The 80EPS..PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 C junction temperature. Typical applications are in input rectification and these products are designed to be used with International Rectifier Switches and Output Rectifiers which are available in identical package outlines.
Values
80 800 - 1200 1450 1.17 - 40 to 150
Case Styles
BASE CATHODE
2
1
CATHODE
3
ANODE
TO-247AC
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1
80EPS..PbF SAFEIR Series
Bulletin I2202 rev. A 03/06
Voltage Ratings
Part Number VRRM , maximum peak reverse voltage V
80EPS08PbF 80EPS12PbF 800 1200
VRSM , maximum non repetitive peak reverse voltage V
900 1300
IRRM 150C mA
1
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current IFSM I2t Max. Peak One Cycle Non-Repetitive Surge Current Max. I2t for fusing
80EPS..
80 1450 1500 10500 14000
Units
A A A2s A s
2
Conditions
@ TC = 100 C, 180 conduction half sine wave 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied t = 0.1 to 10ms, no voltage reapplied
I t
2
Max. I t for fusing
2
105000
Electrical Specifications
Parameters
VFM rt Max. Forward Voltage Drop Forward slope resistance
80EPS..
1.17 3.17 0.73 0.1 1.0
Units
V m V mA
Conditions
@ 80A, TJ = 25C TJ = 150C TJ = 25 C TJ = 150 C
VF(TO) Threshold voltage IRM Max. Reverse Leakage Current
VR = rated VRRM
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range
80EPS..
- 40 to 150 - 40 to 150 0.35 40 0.2 6 (0.21) Min. Max. 6 (5) 12 (10)
Units
C C C/W C/W C/W g (oz.) Kg-cm (Ibf-in) JEDEC
Conditions
RthJC Max. Thermal Resistance Junction to Case RthJA Max. Thermal Resistance Junction to Ambient RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Case Style Marking Device
DC operation
Mounting surface , smooth and greased
TO-247AC 80EPS12
2
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80EPS..PbF SAFEIR Series
Bulletin I2202 rev. A 03/06
Maximum Allowable Case T emperature (C) 150 140 130 120 110 30 100 90 90 80 0 10 20 30 40 50 60 70 80 90 Average Forward Current (A) 120 180 60
Conduc tion Angle
Maximum Allowable Case T emperature (C)
150 140 130
Conduction Period
80EPS S .. eries R thJC (DC) = 0.35 K/ W
80EPS S .. eries R thJC (DC) = 0.35 K/ W
120 110 100
30 60 90 120 180 DC
90 0 20 40 60 80 100 120 140 Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average Forward Power Loss (W) 180 120 90 60 30 R Limit MS 60 40 20 0 0 10 20 30 40 50 60 70 80 90 Average Forward Current (A)
Conduction Angle
Fig. 2 - Current Rating Characteristics
Maximum Average Forward Power Loss (W) 160 140 120 100 DC 180 120 90 60 30
120 100 80
80 RMSLimit 60 40 20 0 0 20 40 60 80 100 120 140 Average Forward Current (A) 80EPS S .. eries TJ = 150C
Conduction Period
80EPS S .. eries TJ = 150C
Fig. 3 - Forward Power Loss Characteristics
Peak Half S Wave Forward Current (A) ine
At Any Rated Load Condition And With Rated VRRM Applied Following S urge.
Fig. 4 - Forward Power Loss Characteristics
Peak Half S Wave Forward Current (A) ine 1800 1600 1400 1200 1000 800 600 400 0.01
Maximum Non Repetitive S urge Current Versus Pulse T rain Dura tion.
1600 1400 1200 1000 800 600 400 1
Initial T = 150C J @60 Hz 0.0083 s @50 Hz 0.0100 s
Initial T = 150C J No Voltage R eapplied Rated V RRMR eapplied
80EPS S .. eries
80EPS S .. eries 0.1 Pulse T rain Duration (s) 1
10
100
Number Of Equal Amplitud e Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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80EPS..PbF SAFEIR Series
Bulletin I2202 rev. A 03/06
1000 Instantaneous F orward Current (A)
100 TJ= 25C 10
TJ= 150C
80EPS S .. eries 1 0 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
T ransient T hermal Impedance Z thJC (K/ W) 1 S teady S tate Value (DC Operation)
0.1
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 S ingle Pulse 80EPS S .. eries
0.01 0.0001
0.001
0.01
0.1
1
10
S quare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
4
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80EPS..PbF SAFEIR Series
Bulletin I2202 rev. A 03/06
Outline Table
3. 65 (0 .14 4) 15 .90 (0 .626 ) 15 .30 (0 .602 ) 5. 70 (0 .22 5) 5.30 ( 0.208) 20 .30 (0 .800 ) 19 .70 (0 .775 ) 5.50 ( 0.217) 4. 50 (0 .17 7) 1 3 (2 PLCS.) 3. 55 (0 .13 9)
DIA.
5. 30 (0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098)
1.5 ( 0.059)
14. 80 ( 0.583)
14 .20 ( 0 .559 )
4. 30 (0 .17 0) 3. 70 (0 .14 5) 2. 20 (0 .08 7) 2. 40 (0 .09 5) M AX . 0.80 ( 0.032) 0. 40 (0 .21 3)
1. 40 (0 .05 6)
M AX .
1. 00 (0 .03 9) 10. 94 ( 0.430) 10 .86 (0 .427 )
Dimensions in millimeters and inches
Marking Information
EXAMPLE: THIS IS A 80EPS12 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN ASSEMBLY LINE "H"
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER
80EPS12
P035H
56
57
DATE CODE P = LEAD-FREE YEAR 0 = 2000 WEEK 35 LINE H
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80EPS..PbF SAFEIR Series
Bulletin I2202 rev. A 03/06
Ordering Information Table
Device Code
80
1 1 2 3 4 5 6 -
E
2
P
3
S
4
12 PbF
5 6
Current Rating (80 = 80A) Circuit Configuration: E = Single Diode Package: P = TO-247AC (Modified) Type of Silicon: S = Standard Recovery Rectifier Voltage Ratings none = Standard Production PbF = Lead-Free 12 = 1200V 08 = 800V
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/06
6
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